Research Overview

The FIND Lab (Frontier Innovative Nanomaterials & Devices Laboratory) at UNIST explores advanced electronic materials and device technologies for next-generation semiconductor, energy, and electromagnetic applications. Our research spans the entire spectrum from atomic-scale materials synthesis and interface engineering to device integration and system-level applications, with particular emphasis on two-dimensional (2D) materials, MXenes, compound semiconductors, and diamond electronic materials.

By combining materials synthesis, thin-film and interface engineering, semiconductor device fabrication, and electromagnetic/thermal characterization, we aim to establish new materials platforms for future electronics, power devices, high-frequency systems, and energy technologies.

Major Research Areas:

- 2D Semiconductor Materials & Wafer-Scale Integration

: Wafer-scale synthesis and atomic-level engineering of 2D semiconductors and insulating materials, including TMDs and hBN, with emphasis on heterostructures, interface/contact engineering, and BEOL-compatible integration for next-generation electronic and memory devices.

- MXenes for Electromagnetic & Energy Applications

: Composition, structure, and interface engineering of highly conductive MXenes for broadband electromagnetic interference (EMI) shielding and absorption, high-frequency/mmWave applications, sensors, and electrochemical energy-storage devices.

- Compound Semiconductors & Diamond Electronic Materials for Power Electronics

: Development of wide- and ultra-wide-bandgap semiconductor materials, including SiC, GaN, Ga2O3, and diamond, for next-generation power electronics. Our research focuses on materials growth, thin-film and interface engineering, device integration, and diamond-based thermal management and electronic materials toward high-power, high-voltage, and high-temperature semiconductor systems.

- Semiconductor Thin Films, Interfaces & Emerging Devices

: Engineering of semiconductor surfaces, interfaces, contacts, and heterojunctions to understand and control carrier transport, reliability, and switching phenomena for advanced transistors, memories, sensors, and neuromorphic devices.